Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

被引：101

作者：

Forsen, E ^{[1
]}

Abadal, G

Ghatnekar-Nilsson, S

Teva, J

Verd, J

Sandberg, R

Svendsen, W

Perez-Murano, F

Esteve, J

Figueras, E

Campabadal, F

Montelius, L

Barniol, N

Boisen, A

机构：

[1] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark

[2] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[3] Lund Univ, Solid State Phys & Nanometer Consortium, S-22362 Lund, Sweden

[4] Univ Autonoma Barcelona, Natl Microelect Ctr, Bellaterra 08193, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.1999838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics.

引用

页数：3

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