Improvement of dark current density of AlInAs/InGaAs metal-semiconductor-metal photodetector using phosphine-plasma-treated Schottky barrier

被引：3

作者：

Hirata, D

Sugino, T

Shirafuji, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 03期

关键词：

AlInAs; InGaAs; MSM photodetector; phosphorus passivation; Schottky barrier height;

D O I：

10.1143/JJAP.35.1779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlInAs/InGaAs metal-semiconductor-metal (MSM) photodetectors with a low dark current density are fabricated using a surface modification process with phosphine (PH3) plasma. Phosphidization of the AlInAs cap layer reduces the surface state density and allows formation of high Schottky barrier with a tunnel metal-insulator-semiconductor (MIS) structure. A dark current density as low as 0.021 pA/mu m(2) at 10 V is obtained.

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收藏

页码：1779 / 1780

页数：2

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