LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS

被引：6

作者：

CHYI, JI ^{[1
]}

WEI, TS ^{[1
]}

HONG, JW ^{[1
]}

LIN, W ^{[1
]}

TU, YK ^{[1
]}

机构：

[1] MINIST TRANSPORTAT & COMMUN,TELECOMMUN LABS,CHUNGLI,TAIWAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODETECTORS;

D O I：

10.1049/el:19940215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55 mum wavelength varies between 0.21 and 0.43 A/W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44 muA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.

引用

页码：355 / 356

页数：2

共 9 条

[1] AVERNIS SV, 1992, P INT S GAAS REL COM, P839
[2] 1.3 MU-M INGAAS MSM PHOTODETECTOR WITH ABRUPT INGAAS/ALINAS INTERFACE
BURROUGHES, JH
HARGIS, M
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (06) : 532 - 534
[3] HIGH-PERFORMANCE AL0.15GA0.85AS/IN0.53GA0.47AS MSM PHOTODETECTORS GROWN BY OMCVD
HONG, WP
CHANG, GK
BHAT, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 659 - 662
[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[5] PSEUDOMORPHIC GAINP SCHOTTKY DIODE AND MSM DETECTOR ON INP
LOUALICHE, S
LECORRE, A
GINUDI, A
HENRY, L
VAUDRY, C
CLEROT, F
[J]. ELECTRONICS LETTERS, 1990, 26 (07) : 487 - 488
[6] AN INVESTIGATION OF THE OPTOELECTRONIC RESPONSE OF GAAS/INGAAS MSM PHOTODETECTORS
SCHUMACHER, H
LEBLANC, HP
SOOLE, J
BHAT, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 607 - 609
[7] HIGH-PERFORMANCE UNDOPED INP/N-IN0.53GA0.47AS MSM PHOTODETECTORS GROWN BY LP-MOVPE
SHI, CX
GRUTZMACHER, D
STOLLENWERK, M
WANG, QK
HEIME, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1028 - 1031
[8] Soole J. B. D., 1989, IEEE Photonics Technology Letters, V1, P250, DOI 10.1109/68.36058
[9] HIGH-PERFORMANCE OF FE-INP INGAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
YANG, L
SUDBO, AS
LOGAN, RA
TANBUNEK, T
TSANG, WT
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) : 56 - 58

← 1 →