Atomic layer deposition of high dielectric constant nanolaminates

被引：45

作者：

Zhang, H ^{[1
]}

Solanki, R ^{[1
]}

机构：

[1] Oregon Grad Inst, Dept Elect & Comp Engn, Beaverton, OR 97006 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 04期

关键词：

D O I：

10.1149/1.1355690

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin stacks comprised of alternating layers of Ta2O5/HfO2, Ta2O5/ZrO2, and ZrO2/HfO2 were investigated as high-permittivity insulators for possible gate dielectric applications. These thin layers were deposited on silicon substrates using atomic layer deposition. Nanolaminates with silicon oxide equivalent thickness of about 2 nm had dielectric constants of around ten and leakage current densities at 1 MV/cm of around 10(-8) A/cm(2). Of the three kinds of nanolaminates investigated, ZrO2/HfO2 structures showed the highest breakdown field and the lowest leakage current. (C) 2001 The Electrochemical Society. All rights reserved.

引用

页码：F63 / F66

页数：4

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