Molecular-beam deposition of high-k gate dielectrics for advanced CMOS

被引：6

作者：

Dimoulas, A ^{[1
]}

机构：

[1] Inst Mat Sci Agh, MBE Lab, Athens, Greece

来源：

MATERIALS FOR INFORMATION TECHNOLOGY: DEVICES, INTERCONNECTS AND PACKAGING | 2005年

关键词：

D O I：

10.1007/1-84628-235-7_1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3 / 15

页数：13

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