Photoluminescence transient-decay study of the deep-donor bound-exciton-emission band in high-purity InP

被引：6

作者：

Benzaquen, R

Charbonneau, S

Leonelli, R

Roth, AP

机构：

[1] UNIV MONTREAL,DEPT PHYS,MONTREAL,PQ H3C 3J7,CANADA

[2] UNIV MONTREAL,GRP RECH PHYS & TECHNOL COUCHES MINCES,MONTREAL,PQ H3C 3J7,CANADA

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.53.3627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed time-resolved photoluminescence study of the deep-donor bound-exciton-emission band frequently observed below the acceptor bound-exciton transition, in high-purity n-type InP grown by chemical-beam epitaxy, has been performed. The decay lifetimes across the broad emission band increase with increasing exciton localization energy. A theory developed by Rashba and Gurgenishvili [Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962)] [Sov. Phys, Solid State 4, 759 (1962)] which predicts a three-halves dependence of the exciton-localization energy on the bound-exciton lifetimes has been observed in InP.

引用

页码：3627 / 3629

页数：3

共 8 条

[1] EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPY OF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BY CHEMICAL-BEAM EPITAXY [J].