Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

被引：35

作者：

Okabayashi, J ^{[1
]}

Kimura, A

Rader, O

Mizokawa, T

Fujimori, A

Hayashi, T

Tanaka, M

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

[3] Hiroshima Univ, Dept Solid State Phys, Higashihiroshima 7398526, Japan

[4] BESSY, D-12489 Berlin, Germany

[5] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

关键词：

Ga1-xMnxAs; photoemission spectroscopy; energy-band dispersion; density of states;

D O I：

10.1016/S1386-9477(01)00080-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：192 / 195

页数：4

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