Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

被引：46

作者：

He, JL ^{[1
]}

Li, WZ ^{[1
]}

Wang, LD ^{[1
]}

Wang, J ^{[1
]}

Li, HD ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 135卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

ion beam assisted deposition; ion beam sputtering; polymer; ion beam bombardment; PTFE;

D O I：

10.1016/S0168-583X(97)00630-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (similar to 1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed. (C) 1998 Published by Elsevier Science B.V.

引用

页码：512 / 516

页数：5

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