Oxide-confined vertical-cavity laser with additional etched void confinement

被引:3
作者
Deng, H
Deppe, DG
机构
[1] Microelectronics Research Center, Department of Electrical Engineering, University of Texas, Austin
关键词
vertical cavity surface emitting lasers; semiconductor junction lasers;
D O I
10.1049/el:19960579
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A vertical-cavity surface-emitting laser that incorporates oxide confinement with additional etched void photon confinement is described. A room-temperature continuous-wave threshold of 75 mu A for a 3.5 mu m-diameter lateral device size is achieved.
引用
收藏
页码:900 / 901
页数:2
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