Stacking-order dependent transport properties of trilayer graphene

被引：104

作者：

Jhang, S. H. ^{[1
]}

Craciun, M. F. ^{[2
]}

Schmidmeier, S. ^{[1
]}

Tokumitsu, S. ^{[3
]}

Russo, S. ^{[2
]}

Yamamoto, M. ^{[3
]}

Skourski, Y. ^{[4
]}

Wosnitza, J. ^{[4
]}

Tarucha, S. ^{[3
]}

Eroms, J. ^{[1
]}

Strunk, C. ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[2] CEMPS Univ Exeter, Ctr Graphene Sci, Exeter EX4 4QF, Devon, England

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[4] Helmholtz Zentrum Dresden Rossendorf, Dresden High Magnet Field Lab, D-01314 Dresden, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

DIRAC FERMIONS; BERRYS PHASE; BILAYER;

D O I：

10.1103/PhysRevB.84.161408

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of v = 2,4,6, ... with a step of Delta v = 2, whereas the inversion-symmetric ABC trilayer exhibits plateaus at v = 6 and 10 with fourfold spin and valley degeneracy.

引用

页数：4

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