Tuneable electronic properties in graphene

被引:264
作者
Craciun, M. F. [1 ]
Russo, S. [2 ]
Yamamoto, M. [3 ]
Tarucha, S. [3 ]
机构
[1] Univ Exeter, Sch Engn, Ctr Graphene Sci, Exeter EX4 4QF, Devon, England
[2] Univ Exeter, Sch Phys, Ctr Graphene Sci, Exeter EX4 4QF, Devon, England
[3] Univ Tokyo, Dept Appl Phys, Tokyo 113, Japan
关键词
Graphene; Double-gated; p-n junctions; Graphene multilayers; FIELD-EFFECT TRANSISTORS; BERRYS PHASE; CARBON; TRANSPORT; BANDGAP; CONDUCTANCE; REFLECTION; LAYERS; FILMS;
D O I
10.1016/j.nantod.2010.12.001
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:42 / 60
页数:19
相关论文
共 121 条
[1]   Quantized transport in graphene p-n junctions in a magnetic field [J].
Abanin, D. A. ;
Levitov, L. S. .
SCIENCE, 2007, 317 (5838) :641-643
[2]   Berry's phase and absence of back scattering in carbon nanotubes [J].
Ando, T ;
Nakanishi, T ;
Saito, R .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (08) :2857-2862
[3]   Dependence of band structures on stacking and field in layered graphene [J].
Aoki, Masato ;
Amawashi, Hiroshi .
SOLID STATE COMMUNICATIONS, 2007, 142 (03) :123-127
[4]   Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates [J].
Avetisyan, A. A. ;
Partoens, B. ;
Peeters, F. M. .
PHYSICAL REVIEW B, 2009, 80 (19)
[5]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[6]  
Balog R, 2010, NAT MATER, V9, P315, DOI [10.1038/nmat2710, 10.1038/NMAT2710]
[7]   Colloquium: Andreev reflection and Klein tunneling in graphene [J].
Beenakker, C. W. J. .
REVIEWS OF MODERN PHYSICS, 2008, 80 (04) :1337-1354
[8]   Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].
Castro, Eduardo V. ;
Novoselov, K. S. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Dos Santos, J. M. B. Lopes ;
Nilsson, Johan ;
Guinea, F. ;
Geim, A. K. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[9]   Electronic properties of a biased graphene bilayer [J].
Castro, Eduardo V. ;
Novoselov, K. S. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Lopes dos Santos, J. M. B. ;
Nilsson, Johan ;
Guinea, F. ;
Geim, A. K. ;
Castro Neto, A. H. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (17)
[10]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162