Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)

被引：128

作者：

Koh, Yee Kan ^{[1
,2
,4
]}

Bae, Myung-Ho ^{[3
]}

Cahill, David G. ^{[1
,2
]}

Pop, Eric ^{[3
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[4] Natl Univ Singapore, Dept Mech Engn, Singapore 117548, Singapore

来源：

ACS NANO | 2011年 / 5卷 / 01期

关键词：

few-layer graphene; number of graphene layers; Raman spectroscopy; graphene thickness; absorbance of monolayer graphene; field-effect mobility of carriers; electrostatic interlayer screening; RAMAN-SPECTROSCOPY; SCATTERING; FILMS; SIO2;

D O I：

10.1021/nn102658a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si); and is particularly us:dill in the, range n > 4 where few methods exist. We compare out results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Then, we apply out method to unambiguously identify n of FLG devices on SiO2 and find that the mobility (mu approximate to 2000 cm(2) V-1 s(-1)) is independent of layer thickness for n > 4. Our findings suggest that electrical transport in gated FLG devices is dominated by carriers near the FLG/SiO2 interface and is thus limited by the environment even for n > 4.

引用

页码：269 / 274

页数：6

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Reliably Counting Atomic Planes of Few-Layer Graphene (n &gt; 4)

Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)