PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

被引：52

作者：

Wang, GS ^{[1
]}

Meng, XJ ^{[1
]}

Sun, JL ^{[1
]}

Lai, ZQ ^{[1
]}

Yu, J ^{[1
]}

Guo, SL ^{[1
]}

Cheng, JG ^{[1
]}

Tang, J ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 21期

关键词：

D O I：

10.1063/1.1419234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization P-r is about 22.8 muC/cm(2) and the coercive field E-c is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3x10(9) fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application. (C) 2001 American Institute of Physics.

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页码：3476 / 3478

页数：3

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