Graphene field-effect devices

被引：46

作者：

Echtermeyer, T. J.

Lemme, M. C.

Bolten, J.

Baus, M.

Ramsteiner, M.

Kurz, H.

机构：

[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany

[2] AMO GmbH, AMICA, D-52074 Aachen, Germany

[3] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2007年 / 148卷 / 1期

关键词：

D O I：

10.1140/epjst/e2007-00222-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).

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页码：19 / 26

页数：8

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