Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

被引：20

作者：

Baillot, R. ^{[1
]}

Deshayes, Y. ^{[1
]}

Bechou, L. ^{[1
]}

Buffeteau, T. ^{[2
]}

Pianet, I. ^{[2
]}

Armand, C. ^{[3
]}

Voillot, F. ^{[3
]}

Sorieul, S. ^{[4
]}

Ousten, Y. ^{[1
]}

机构：

[1] Univ Bordeaux 1, IMS Lab, UMR 5218, F-33405 Talence, France

[2] Univ Bordeaux 1, ISM Lab, UMR 5255, F-33405 Talence, France

[3] INSA, Dept Phys, F-31077 Toulouse 4, France

[4] CENBG Lab, UMR 5797, F-33175 Gradignan, France

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

IMPROVEMENT; WET;

D O I：

10.1016/j.microrel.2010.07.056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a physics of failure (POF) methodology coupling failure signatures with physicochemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 degrees C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1568 / 1573

页数：6

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