Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

被引：42

作者：

Huang, H. W. ^{[1
,2
]}

Lin, C. H. ^{[2
]}

Huang, J. K. ^{[1
]}

Lee, K. Y. ^{[2
]}

Lin, C. F. ^{[3
]}

Yu, C. C. ^{[2
]}

Tsai, J. Y. ^{[2
]}

Hsueh, R. ^{[2
]}

Kuo, H. C. ^{[1
]}

Wang, S. C. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[2] Luxtaltek Corp, Chunan 350, Miaoli, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 164卷 / 02期

关键词：

GaN; Light emitting diodes (LEDs); Nano-hole patterned sapphire substrate (NHPSS); Nano-imprint lithography (NIL); OMNIDIRECTIONAL REFLECTOR; EFFICIENCY; LEDS; ENHANCEMENT; EXTRACTION;

D O I：

10.1016/j.mseb.2009.07.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：76 / 79

页数：4

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