Nitride-based flip-chip ITO LEDs

被引:78
作者
Chang, SJ [1 ]
Chang, CS
Su, YK
Lee, CT
Chen, WS
Shen, CF
Hsu, YP
Shei, SC
Lo, HM
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] S Epitaxy Corp, Hsin Shi 744, Taiwan
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2005年 / 28卷 / 02期
关键词
flip-chip; GaN; indium-tin-oxide (ITO); light-emitting diode (LED);
D O I
10.1109/TADVP.2005.846941
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.
引用
收藏
页码:273 / 277
页数:5
相关论文
共 26 条
[1]   Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].
Akasaki, I ;
Amano, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408
[2]   InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts [J].
Chang, CS ;
Chang, SJ ;
Su, YK ;
Chiou, YZ ;
Lin, YC ;
Hsu, YP ;
Shei, SC ;
Lo, HM ;
Ke, JC ;
Chen, SC ;
Liu, CH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6A) :3324-3327
[3]   High brightness InGaN green LEDs with an ITO on n++-SPS upper contact [J].
Chang, CS ;
Chang, SJ ;
Su, YK ;
Kuo, CH ;
Lai, WC ;
Lin, YC ;
Hsu, YP ;
Shei, SC ;
Tsai, JM ;
Lo, HM ;
Ke, JC ;
Shen, JK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (11) :2208-2212
[4]   Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure [J].
Chang, KM ;
Chu, JY ;
Cheng, CC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (08) :1807-1809
[5]   Nitride-based LEDs with p-InGaN capping layer [J].
Chang, SJ ;
Chen, CH ;
Chang, PC ;
Su, YK ;
Chen, PC ;
Jhou, YD ;
Hung, H ;
Wang, SM ;
Huang, BR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2567-2570
[6]   Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].
Chang, SJ ;
Chang, CS ;
Su, YK ;
Chuang, RW ;
Lin, YC ;
Shei, SC ;
Lo, HM ;
Lin, HY ;
Ke, JC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443
[7]   GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts [J].
Chang, SJ ;
Lee, ML ;
Sheu, JK ;
Lai, WC ;
Su, YK ;
Chang, CS ;
Kao, CJ ;
Chi, GC ;
Tsai, JA .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :212-214
[8]   InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].
Chang, SJ ;
Lai, WC ;
Su, YK ;
Chen, JF ;
Liu, CH ;
Liaw, UH .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283
[9]   400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].
Chang, SJ ;
Kuo, CH ;
Su, YK ;
Wu, LW ;
Sheu, JK ;
Wen, TC ;
Lai, WC ;
Chen, JF ;
Tsai, JM .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748
[10]   Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors [J].
Chiou, YZ ;
Su, YK ;
Chang, SJ ;
Chen, JF ;
Chang, CS ;
Liu, SH ;
Lin, YC ;
Chen, CH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A) :3643-3645