Nitride-based flip-chip ITO LEDs

被引：78

作者：

Chang, SJ ^{[1
]}

Chang, CS

Su, YK

Lee, CT

Chen, WS

Shen, CF

Hsu, YP

Shei, SC

Lo, HM

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2005年 / 28卷 / 02期

关键词：

flip-chip; GaN; indium-tin-oxide (ITO); light-emitting diode (LED);

D O I：

10.1109/TADVP.2005.846941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.

引用

页码：273 / 277

页数：5

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