Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

被引：22

作者：

Chang, KM ^{[1
]}

Chu, JY

Cheng, CC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Highlink Technol Corp, Hsinchu 300, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 08期

关键词：

GaN; indium-tin-oxide (ITO); In0.1Ga0.9N; light-emitting diodes (LEDs);

D O I：

10.1109/LPT.2004.830523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO And p-GaN. The contact resistivity around 2.6 x 10(-2) Omega . cm(2) results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.

引用

页码：1807 / 1809

页数：3

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