Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays

被引：220

作者：

Yuan, Guo-Dong ^{[1
]}

Zhang, Wen-Jun ^{[1
]}

Jie, Jian-Sheng ^{[1
,2
]}

Fan, Xia ^{[1
]}

Tang, Jian-Xin ^{[1
]}

Shafiq, Ismathullakhan ^{[1
]}

Ye, Zhi-Zhen ^{[3
]}

Lee, Chun-Sing ^{[1
]}

Lee, Shuit-Tong ^{[1
]}

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] Hefei Univ Technol, Sch Sci, Hefei 230009, Anhui, Peoples R China

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 01期

关键词：

D O I：

10.1002/adma.200701377

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Well-aligned ZnO nanowires (NWs) with tunable n-type conductivity are synthesized by introducing Ga2O3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the resistivity of ZnO NWs can be controlled, with high reproducibility, by the Ga impurities.

引用

页码：168 / +

页数：7

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