共 442 条
The larger acenes: Versatile organic semiconductors
被引:1826
作者:

Anthony, John E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USA Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
机构:
[1] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
关键词:
acenes;
aromaticity;
conducting materials;
fused-ring systems;
semiconductors;
D O I:
10.1002/anie.200604045
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Acenes have long been the subject of intense study because of the unique electronic properties associated with their π-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
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页码:452 / 483
页数:32
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共 442 条
- [91] Molecular beam deposited thin films of pentacene for organic field effect transistor applications[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2501 - 2508Dimitrakopoulos, CD论文数: 0 引用数: 0 h-index: 0机构: PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDSBrown, AR论文数: 0 引用数: 0 h-index: 0机构: PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDSPomp, A论文数: 0 引用数: 0 h-index: 0机构: PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS
- [92] Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators[J]. SCIENCE, 1999, 283 (5403) : 822 - 824Dimitrakopoulos, CD论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAPurushothaman, S论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAKymissis, J论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USACallegari, A论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAShaw, JM论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
- [93] Imaging of crystal morphology and molecular simulations of surface energies in pentacene thin films[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (12) : 6066 - 6071Drummy, LF论文数: 0 引用数: 0 h-index: 0机构: Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USAMiska, PK论文数: 0 引用数: 0 h-index: 0机构: Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USAAlberts, D论文数: 0 引用数: 0 h-index: 0机构: Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USALee, N论文数: 0 引用数: 0 h-index: 0机构: Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USAMartin, DC论文数: 0 引用数: 0 h-index: 0机构: Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
- [94] An optical study of single pentacene molecules in n-tetradecane[J]. CHEMICAL PHYSICS LETTERS, 2000, 317 (3-5) : 232 - 237Durand, Y论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, NetherlandsBloess, A论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlandsvan Oijen, AM论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, NetherlandsKöhler, J论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, NetherlandsGroenen, EJJ论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, NetherlandsSchmidt, J论文数: 0 引用数: 0 h-index: 0机构: Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands Leiden Univ, Huygens Lab, Ctr Study Excited States Mol, NL-2300 RA Leiden, Netherlands
- [95] Organic electronics on paper[J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2673 - 2675Eder, F论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, GermanyKlauk, H论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, GermanyHalik, M论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, GermanyZschieschang, U论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, GermanySchmid, G论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, GermanyDehm, C论文数: 0 引用数: 0 h-index: 0机构: Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany
- [96] STRUCTURAL INVESTIGATIONS OF AMORPHOUS TETRACENE AND PENTACENE BY LOW-TEMPERATURE ELECTRON-DIFFRACTION[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1983, 87 (04) : 544 - 551EIERMANN, R论文数: 0 引用数: 0 h-index: 0机构: UNIV MARBURG,FACHBEREICH PHYS CHEM,D-3550 MARBURG,FED REP GERPARKINSON, GM论文数: 0 引用数: 0 h-index: 0机构: UNIV MARBURG,FACHBEREICH PHYS CHEM,D-3550 MARBURG,FED REP GERBASSLER, H论文数: 0 引用数: 0 h-index: 0机构: UNIV MARBURG,FACHBEREICH PHYS CHEM,D-3550 MARBURG,FED REP GERTHOMAS, JM论文数: 0 引用数: 0 h-index: 0机构: UNIV MARBURG,FACHBEREICH PHYS CHEM,D-3550 MARBURG,FED REP GER
- [97] The effects of charcoal-broiled meat consumption on antioxidant defense system of erythrocytes and antioxidant vitamins in plasma[J]. NUTRITION RESEARCH, 2004, 24 (06) : 435 - 446Elhassaneen, YA论文数: 0 引用数: 0 h-index: 0机构: Menoufia Univ, Fac Home Econ, Dept Nutr & Food Sci, Shibin Al Kawm, Egypt Menoufia Univ, Fac Home Econ, Dept Nutr & Food Sci, Shibin Al Kawm, Egypt
- [98] Semiconductors for organic transistors[J]. MATERIALS TODAY, 2007, 10 (03) : 28 - 37Facchetti, Antonio论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
- [99] Electrochemical lithium doping of a pentacene molecule semiconductor[J]. APPLIED PHYSICS LETTERS, 2005, 86 (26) : 1 - 3Fang, B论文数: 0 引用数: 0 h-index: 0机构: AIST, Inst Energy Technol, Nanoenergy Mat Grp, Tsukuba, Ibaraki 3058568, Japan AIST, Inst Energy Technol, Nanoenergy Mat Grp, Tsukuba, Ibaraki 3058568, JapanZhou, H论文数: 0 引用数: 0 h-index: 0机构: AIST, Inst Energy Technol, Nanoenergy Mat Grp, Tsukuba, Ibaraki 3058568, Japan AIST, Inst Energy Technol, Nanoenergy Mat Grp, Tsukuba, Ibaraki 3058568, Japan论文数: 引用数: h-index:机构:
- [100] Lithium doping of pentacene for electrochemical hydrogen storage[J]. APPLIED PHYSICS LETTERS, 2006, 89 (02)Fang, Baizeng论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Adv Ind Sci & Technol, Energy Technol Inst, Nano Energy Mat Grp, Tsukuba, Ibaraki 3058568, Japan Natl Inst Adv Ind Sci & Technol, Energy Technol Inst, Nano Energy Mat Grp, Tsukuba, Ibaraki 3058568, JapanZhou, Haoshen论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Adv Ind Sci & Technol, Energy Technol Inst, Nano Energy Mat Grp, Tsukuba, Ibaraki 3058568, Japan Natl Inst Adv Ind Sci & Technol, Energy Technol Inst, Nano Energy Mat Grp, Tsukuba, Ibaraki 3058568, Japan论文数: 引用数: h-index:机构: