Positive colossal magnetoresistance effect in ZnO/La0.7Sr0.3MnO3 heterostructure

被引：48

作者：

Jin, K. X. ^{[1
]}

Zhao, S. G. ^{[2
]}

Chen, C. L. ^{[1
]}

Wang, J. Y. ^{[1
]}

Luo, B. C. ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China

[2] Xian Univ Sci & Technol, Dept Basic Sci, Xian 710054, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2900963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, an oxide heterostructure has been fabricated by successively growing La0.7Sr0.3MnO3 and ZnO layers on a LaAlO3 (100) substrate using pulsed laser deposition. The ZnO/La0.7Sr0.3MnO3 heterostructure exhibits good rectifying behavior and a positive colossal magnetoresistance (MR) effect over a temperature range of 77-280 K. The maximum MR values are determined to be about 53.9% at H=0.5 T and 36.4% at H=0.3 T. A possible explanation is given in terms of the effect of magnetic fields on the depletion layer and the capture carriers effect at the interface. (c) 2008 American Institute of Physics.

引用

页数：3

共 20 条

[1] An oxide-diluted magnetic semiconductor: Mn-doped ZnO [J].

Fukumura, T ;

Jin, ZW ;

Ohtomo, A ;

Koinuma, H ;

Kawasaki, M .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3366-3368

[2] Temperature effect on carrier transport characteristics in SrTiO3-δ/Si p-n heterojunction -: art. no. 123502 [J].

Guo, HZ ;

Huang, YH ;

Jin, KJ ;

Zhou, QL ;

Lu, HB ;

Liu, LF ;

Zhou, YL ;

Cheng, BL ;

Chen, ZH .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[3] Photoresponsive character of double-doped La2/3(Ca1/3Sr2/3)1/3MnO3 film [J].

Jin, KX ;

Chen, CL ;

Wang, SL ;

Wang, YL ;

Wang, YC ;

Song, ZM ;

Ren, R .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) :1537-1539

[4] THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].

JIN, S ;

TIEFEL, TH ;

MCCORMACK, M ;

FASTNACHT, RA ;

RAMESH, R ;

CHEN, LH .

SCIENCE, 1994, 264 (5157) :413-415

[5] Photocarrier injection effect on double exchange ferromagnetism in (La, Sr)MnO3/SrTiO3 heterostructure [J].

Katsu, H ;

Tanaka, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3245-3247

[6] Photocarrier injection effect and p-n junction characteristics of La0.7Sr0.3MnO3/ZnO and Si heterostructures [J].

Lord, K. ;

Hunter, D. ;

Williams, T. M. ;

Pradhan, A. K. .

APPLIED PHYSICS LETTERS, 2006, 89 (05)

[7] Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions -: art. no. 241915 [J].

Lu, HB ;

Jin, KJ ;

Huang, YH ;

He, M ;

Zhao, K ;

Cheng, BL ;

Chen, ZH ;

Zhou, YL ;

Dai, SY ;

Yang, GZ .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[8]

Lü HB, 2003, CHINESE PHYS LETT, V20, P137, DOI 10.1088/0256-307X/20/1/341

[9] Dynamic Jahn-Teller effect and colossal magnetoresistance in La1-xSrxMnO3 [J].

Millis, AJ ;

Shraiman, BI ;

Mueller, R .

PHYSICAL REVIEW LETTERS, 1996, 77 (01) :175-178

[10] Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance -: art. no. 017202 [J].

Mitra, C ;

Raychaudhuri, P ;

Dörr, K ;

Müller, KH ;

Schultz, L ;

Oppeneer, PM ;

Wirth, S .

PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4

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