Photocarrier injection effect and p-n junction characteristics of La0.7Sr0.3MnO3/ZnO and Si heterostructures

被引:42
作者
Lord, K. [1 ]
Hunter, D. [1 ]
Williams, T. M. [1 ]
Pradhan, A. K. [1 ]
机构
[1] Norfolk State Univ, Ctr Mat Res, Norfolk, VA 23504 USA
基金
美国国家航空航天局;
关键词
D O I
10.1063/1.2335406
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report the fabrication of p-n junctions, consisting of p-type La0.7Sr0.3MnO3 (LSMO) and either n-type ZnO grown on sapphire or n-type Si substrates. The LSMO/ZnO junction exhibits excellent rectifying behavior over the temperature range of 77-300 K with breakdown voltage less than -10 V. LSMO/Si displayed p-n junction characteristics over a temperature region of 77-360 K. Inserting a SrTiO3 layer between LSMO and Si remarkably improved the junction characteristics. All junctions show photocarrier injection effect, illustrating the control of transport properties of LSMO in which electron injection decreases hole concentration following the photoexcitation of both ZnO and Si. (c) 2006 American Institute of Physics.
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页数:3
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