Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

被引：1740

作者：

Zeng, Zhiyuan ^{[1
]}

Yin, Zongyou ^{[1
]}

Huang, Xiao ^{[1
]}

Li, Hai ^{[1
]}

He, Qiyuan ^{[1
]}

Lu, Gang ^{[1
]}

Boey, Freddy ^{[1
]}

Zhang, Hua ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2011年 / 50卷 / 47期

关键词：

electrochemistry; nanomaterials; nanosheets; semiconductors; sensors; MOS2; GRAPHENE; INTERCALATION; EXFOLIATION; NANORIBBONS; WS2;

D O I：

10.1002/anie.201106004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：11093 / 11097

页数：5

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