Porous GaN nanowires synthesized using thermal chemical vapor deposition

被引：59

作者：

Bae, SY

Seo, HW

Park, J ^{[1
]}

Yang, H

Kim, B

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 376卷 / 3-4期

关键词：

D O I：

10.1016/S0009-2614(03)00955-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Porous structured GaN nanowires were synthesized with a large scale by chemical vapor deposition of Ga/Ga2O3/ B2O3/C mixture under NH3 flow. The average diameter is 40 nm and the length is up to 1 mm. The porous GaN nanowires consist of the wurtzite single crystal grown with the [0 1 1] direction parallel to the wire axis. The size of pores is 5-20 nm. The porous GaN crystals are partially coated with nearly amorphous BCN layers. The photoluminescence exhibits a broad band in the energy range of 2.1-3.6 eV. (C) 2003 Elsevier B.V. All rights reserved.

引用

收藏

页码：445 / 451

页数：7

相关论文

共 20 条

[1] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].

Balkas, CM ;

Davis, RF .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] Catalytic growth and characterization of gallium nitride nanowires [J].

Chen, CC ;

Yeh, CC ;

Chen, CH ;

Yu, MY ;

Liu, HL ;

Wu, JJ ;

Chen, KH ;

Chen, LC ;

Peng, JY ;

Chen, YF .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (12) :2791-2798

[4] High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition [J].

Chen, XH ;

Xu, J ;

Wang, RM ;

Yu, DP .

ADVANCED MATERIALS, 2003, 15 (05) :419-+

[5] Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching [J].

Díaz, DJ ;

Williamson, TL ;

Adesida, I ;

Bohn, PW ;

Molnar, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2375-2383

[6] Laser-assisted catalytic growth of single crystal GaN nanowires [J].

Duan, XF ;

Lieber, CM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) :188-189

[7] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].

FROSCH, CJ ;

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&

[8] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].

Han, WQ ;

Fan, SS ;

Li, QQ ;

Hu, YD .

SCIENCE, 1997, 277 (5330) :1287-1289

[9] Pyrolysis approach to the synthesis of gallium nitride nanorods [J].

Han, WQ ;

Zettl, A .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :303-305

[10] Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere [J].

Han, WQ ;

Redlich, P ;

Ernst, F ;

Rühle, M .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :652-654