Angular dependent energy loss of 0.8-2.0 MeV He ions channeled along the Si⟨100⟩ direction

We present measurements of the electronic stopping power in the 0.8-2.0 MeV energy range of He-4(2+) ions channeled through the Si[0 0 0] axis as a function of the incident angle. The measurements were carried out using the Rutherford Backscattering (RBS) technique with a SIMOX sample that consists of a single Si crystal on the top of a 500 MI buried layer of SiO2 built into a Si[1 0 0] wafer. The measured ratios between the angular dependent and random stopping powers have almost the same width near the maximum of the He-4(2+) stopping power and decrease for higher energies. (C) 1998 Elsevier Science B.V.