Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

被引：35

作者：

Alonso-Gonzalez, P. ^{[1
]}

Alen, B.

Fuster, D.

Gonzalez, Y.

Gonzalez, L.

Martinez-Pastor, J.

机构：

[1] Inst Microelect, IMM, CNM, CSIC, E-28760 Madrid, Spain

[2] Univ Valencia, Inst Ciencia Mat, E-46071 Valencia, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2799736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs (001). The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology. (C) American Institute of Physics.

引用

页数：3

共 23 条

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APPLIED PHYSICS LETTERS, 2007, 90 (11)

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APPLIED PHYSICS LETTERS, 2007, 91 (03)

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