Ferroelectric properties of SrRuO3/(Ba,Sr)TiO3/SrRuO3 epitaxial capacitor

被引：36

作者：

Kawakubo, T ^{[1
]}

Komatsu, S ^{[1
]}

Abe, K ^{[1
]}

Sano, K ^{[1
]}

Yanase, N ^{[1
]}

Fukushima, N ^{[1
]}

机构：

[1] Toshiba Corp, R&D Ctr, Mat & Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

ferroelectric properties; heteroepitaxial films; strained lattice; dielectric constants; remanent polarization; semiconductor memories;

D O I：

10.1143/JJAP.37.5108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric properties were investigated using SrRuO3/(Ba-x, Sr1-x)TiO3(BSTO)/SrRuO3 all-perovskite heteroepitaxial ca pacitors on strontium titanate substrates. The dielectric film had a composition with a Ba content of x = 0 to 1, i.e., the whole composition of the SrTiO3-BaTiO3 solid-solution system. The c-axis of the BSTO film was elongated depending on the Ba content, and reached 0.441 nm at the BaTiO3 composition, which was 8.6% larger than the bulk c-axis. A peak relative di electric constant of 870 and maximum remanent polarization (2Pr) of 58 mu C/cm(2) were obtained depending on the Ba content at a dielectric thickness of 20 nm. These are the highest storage capacitance capacitor and the thinnest ferroelectric capacitor reported so far. Possibilities for deep submicron ferroelectric and dielectric memory applications are also discussed.

引用

页码：5108 / 5111

页数：4

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