Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser

被引：25

作者：

Ledentsov, NN

Bimberg, D

Ustinov, VM

Maximov, MV

Alferov, ZI

Kalosha, VP

Lott, JA

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Belarusian State Univ, Inst Nucl Problems, Minsk 220050, BELARUS

[4] USAF, Inst Technol, Dept Elect & Comp Engn, Wright Patterson AFB, OH 45433 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 01期

关键词：

D O I：

10.1088/0268-1242/14/1/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of self-adjustment of the cavity mode in vertical cavity surface-emitting lasers containing three-period InGaAs-GaAs vertically-coupled quantum dots has been observed. The effect originates from a strong modulation of the refractive index near the gain peak, caused by excitons in quantum dots. The possibility of single quantum dot lasing is demonstrated.

引用

页码：99 / 102

页数：4

共 21 条

[1] Alferov ZI, 1996, SEMICONDUCTORS+, V30, P194
[2] MICROLASER - A LASER WITH ONE-ATOM IN AN OPTICAL-RESONATOR
AN, K
CHILDS, JJ
DASARI, RR
FELD, MS
[J]. PHYSICAL REVIEW LETTERS, 1994, 73 (25) : 3375 - 3378
[3] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS
ASADA, M
MIYAMOTO, Y
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1915 - 1921
[4] Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
Asryan, LV
Suris, RA
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) : 554 - 567
[5] Exciton spectral splitting near room temperature from high contrast semiconductor microcavities
Graham, LA
Deng, Q
Deppe, DG
Huffaker, DL
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (07) : 814 - 816
[6] Gain and threshold of quantum dot lasers: Theory and comparison to experiments
Grundmann, M
Bimberg, D
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4181 - 4187
[7] Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors
Huffaker, DL
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1781 - 1783
[8] Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
Huffaker, DL
Baklenov, O
Graham, LA
Streetman, BG
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (18) : 2356 - 2358
[9] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
KIRSTAEDTER, N
LEDENTSOV, NN
GRUNDMANN, M
BIMBERG, D
USTINOV, VM
RUVIMOV, SS
MAXIMOV, MV
KOPEV, PS
ALFEROV, ZI
RICHTER, U
WERNER, P
GOSELE, U
HEYDENREICH, J
[J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
[10] Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
Kosogov, AO
Werner, P
Gosele, U
Ledentsov, NN
Bimberg, D
Ustinov, VM
Egorov, AY
Zhukov, AE
Kopev, PS
Bert, NA
Alferov, ZI
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3072 - 3074

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