Vertically aligned carbon nanotubes grown at low temperatures for use in displays

被引:12
作者
Takeda, G [1 ]
Pan, L [1 ]
Akita, S [1 ]
Nakayama, Y [1 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 7B期
关键词
carbon nanotube; chemical vapor deposition; low temperature; field emission; binary catalysts;
D O I
10.1143/JJAP.44.5642
中图分类号
O59 [应用物理学];
学科分类号
摘要
Vertically, aligned carbon nanotubes (CNTs) have been synthesized by chemical vapor deposition at low temperatures between 450 degrees C to 550 degrees C for use as display emitters. It has been found that preheating the reaction gas C(2)H(2) at 700 degrees C enhances its reactivity and contributes to the effective decomposition of the gas on the surfaces of catalyst particles heated even at 450 degrees C. We have also found that the catalyst activity is strongly affected by the film thickness and the thickness ratio of layered catalysts, which are Co and Ti in this study. Long CNTs have been obtained when the thicknesses of Co and Ti are reduced. It has been observed that the turn-on voltage of the field emission from the CNTs prepared at low temperatures is similar to that from the CNTs prepared at high temperatures.
引用
收藏
页码:5642 / 5645
页数:4
相关论文
共 17 条
[1]   Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature [J].
Choi, YC ;
Bae, DJ ;
Lee, YH ;
Lee, BS ;
Park, GS ;
Choi, WB ;
Lee, NS ;
Kim, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04) :1864-1868
[2]   Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques [J].
Guillorn, MA ;
Hale, MD ;
Merkulov, VI ;
Simpson, ML ;
Eres, GY ;
Cui, H ;
Puretzky, AA ;
Geohegan, DB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :957-959
[3]   Fabrication and characterization of gated field emitter arrays with self-aligned carbon nanotubes grown by chemical vapor deposition [J].
Han, IT ;
Kim, HJ ;
Park, YJ ;
Lee, N ;
Jang, JE ;
Kim, JW ;
Jung, JE ;
Kim, JM .
APPLIED PHYSICS LETTERS, 2002, 81 (11) :2070-2072
[4]   Growth and emission characteristics of vertically well-aligned carbon nanotubes grown on glass substrate by hot filament plasma-enhanced chemical vapor deposition [J].
Han, J ;
Yang, WS ;
Yoo, JB ;
Park, CY .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7363-7365
[5]   Direct growth of aligned carbon nanotube field emitter arrays onto plastic substrates [J].
Hofmann, S ;
Ducati, C ;
Kleinsorge, B ;
Robertson, J .
APPLIED PHYSICS LETTERS, 2003, 83 (22) :4661-4663
[6]   Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition [J].
Hofmann, S ;
Ducati, C ;
Robertson, J ;
Kleinsorge, B .
APPLIED PHYSICS LETTERS, 2003, 83 (01) :135-137
[7]   Controlling dissociative adsorption for effective growth of carbon nanotubes [J].
Kayastha, V ;
Yap, YK ;
Dimovski, S ;
Gogotsi, Y .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3265-3267
[8]   Field emission characteristics of nodular carbon nanotubes [J].
Li, Q ;
Xu, JF ;
Yu, K ;
Zhu, ZQ ;
Feng, T ;
Wang, X ;
Liu, XH ;
Kang, WP ;
Davidson, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1684-1687
[9]   Carbon nanotube films prepared by thermal chemical vapor deposition at low temperature for field emission applications [J].
Li, YJ ;
Sun, Z ;
Lau, SP ;
Chen, GY ;
Tay, BK .
APPLIED PHYSICS LETTERS, 2001, 79 (11) :1670-1672
[10]  
NAKAYAMA Y, 2004, P IS T NIP, V20, P505