Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature

被引:53
作者
Tounsi, M. [1 ,2 ]
Oukaour, A. [1 ]
Tala-Ighil, B. [1 ]
Gualous, H. [1 ]
Boudart, B. [1 ]
Aissani, D. [2 ]
机构
[1] LUSAC Univ Caen Basse Normandie, F-50130 Octeville, France
[2] LAMOS Univ Bejaia, Bejaia 06000, Algeria
关键词
RELIABILITY;
D O I
10.1016/j.microrel.2010.07.059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
The success of the high temperature power electronic applications depends on the power device reliability. The increasing thermal demands, like in hybrid electric cars, require power devices operating at junction temperatures above their common level of 125 degrees C. The thermal cycles generated in standard modules in such conditions induce several failure mechanisms in their package and chips. This article presents ageing tests of an EconoPIM IGBT module submitted to PWM power cycling at high ambient temperature. Several electrical and thermal parameters are monitored to detect failure onsets in the module components. Static and dynamic measurements are periodically made to reveal possible module characteristic drifts, and to better understand the effects of this kind of cycling test on the module static and switching behaviors. The follow-up of the dynamic parameter evolution represents the originality of this study. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1810 / 1814
页数:5
相关论文
共 14 条
[1]
Amro R., 2006, THESIS CHEMNITZ U GE
[2]
Advanced IGBT modules for railway traction applications: Reliability testing [J].
Berg, H ;
Wolfgang, E .
MICROELECTRONICS RELIABILITY, 1998, 38 (6-8) :1319-1323
[3]
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions [J].
Bouarroudj, M. ;
Khatir, Z. ;
Ousten, J. P. ;
Badel, F. ;
Dupont, L. ;
Lefebvre, S. .
MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) :1719-1724
[4]
BUTTAY C, P 12 EUR C POW EL AP
[5]
Selected failure mechanisms of modern power modules [J].
Ciappa, M .
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :653-667
[6]
High temperature reliability on automotive power modules verified by power cycling tests up to 150°C [J].
Coquery, G ;
Lefranc, G ;
Licht, T ;
Lallemand, R ;
Seliger, N ;
Berg, H .
MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) :1871-1876
[7]
Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A-3300V module with AlSiC base plate. [J].
Coquery, G ;
Lallemand, R .
MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) :1665-1670
[8]
On the effect of power cycling stress on IGBT modules [J].
Cova, P ;
Fantini, F .
MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8) :1347-1352
[9]
FERBER G, P POW CONV INT MOT C, P455
[10]
Fast power cycling test for insulated gate bipolar transistor modules in traction application [J].
Held, M ;
Jacob, P ;
Nicoletti, G ;
Scacco, P ;
Poech, MH .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (10) :1193-1204