The influence of various upper electrodes on fatigue properties of perovskite Pb(Zr,Ti)O3 thin films

被引：24

作者：

Masuda, Y ^{[1
]}

Nozaka, T ^{[1
]}

机构：

[1] Hachinohe Inst Technol, Fac Engn, Dept Elect Intelligence Syst, Hachinohe, Aomori 0318501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9B期

关键词：

ferroelectric thin film; chemical solution deposition; leakage current density; domain pinning; FeRAM; MEMS; fatigue; degradation; polarization switching; upper electrodes of platinum(Pt); SrRuO3 (SRO) and IrO2;

D O I：

10.1143/JJAP.42.5941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) were prepared by chemical solution deposition (CSD). The top electrodes of platinum (Pt), SrRuO3 (SRO), and IrO2 thin films are deposited on the PZT thin films by RF magnetron sputtering (RF) and the pulsed laser deposition (PLD) methods, respectively. The polarization fatigue of ferroelectric thin-film capacitors is investigated. As a result, the remanent polarization value of the PZT thin films of SRO/PZT/PT/Pt/TiOx/SiO2/Si and IrO2/ PZT/PT/Pt/TiOx/SiO2/Si remains more than 10(11) switching cycles at constant value and the value of the PZT thin films of Pt/PZT/PT/Pt/TiOx/SiO2/Si decreases to approximately 50% of its initial value at 10(8) cycles. It is confirmed that polarization fatigue is improved using SRO and IrO2 thin-film electrodes as top electrodes.

引用

页码：5941 / 5946

页数：6

共 20 条

[1] Observations of island structures at the initial growth stage of PbZrxTi1-xO3 thin films prepared by metalorganic chemical vapor deposition [J].

Fujisawa, H ;

Morimoto, K ;

Shimizu, M ;

Niu, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5446-5450

[2] CURRENT-VOLTAGE CHARACTERISTICS OF ELECTRON-CYCLOTRON-RESONANCE SPUTTER-DEPOSITED SRTIO3 THIN-FILMS [J].

FUKUDA, Y ;

AOKI, K ;

NUMATA, K ;

NISHIMURA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5255-5258

[3]

Hong SK, 1998, J KOREAN PHYS SOC, V32, pS1525

[4] Ferroelectric properties of Al-doped lead titanate zirconate thin films prepared by chemical solution deposition process [J].

Iijima, T ;

He, G ;

Wang, Z ;

Tsuboi, H ;

Hiyama, K ;

Okada, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5426-5428

[5] Influence of La0.5Sr0.5CoO3 heterostructure electrodes on Pb(Zr,Ti)O3 thin film properties [J].

Im, KV ;

Kuh, BJ ;

Park, SO ;

Lee, SI ;

Choo, WK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5437-5440

[6] Ferroelectric properties of BaTi0.91 (Hf0.5, Zr0.5)0.09O3 thin films fabricated by pulsed laser deposition [J].

Kakemoto, H ;

Kakimoto, K ;

Baba, A ;

Fujita, S ;

Masuda, Y .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2001, 109 (08) :651-655

[7]

Kakimoto K, 2002, J AM CERAM SOC, V85, P1019, DOI 10.1111/j.1151-2916.2002.tb00215.x

[8]

Kim CH, 2002, B KOR CHEM SOC, V23, P741

[9] Measurement of electric-field-induced displacements in (Pb, La)TiO3 thin films using scanning probe microscopy [J].

Maiwa, H ;

Ichinose, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5403-5407

[10] Evaluation of Pb(Zr,Ti)O3 films derived from propylene-glycol-based sol-gel solutions [J].

Maki, K ;

Soyama, N ;

Mori, S ;

Ogi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (9B) :5421-5425

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