Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

被引：56

作者：

Gaska, R

Shur, MS

Fjeldly, TA

Bykhovski, AD

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.369621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor-insulator-semiconductor structure. The band structure and the charge distribution are strongly influenced by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures. (C) 1999 American Institute of Physics. [S0021-8979(99)03305-8].

引用

页码：3009 / 3011

页数：3

共 12 条

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