Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.96μm wavelength

被引：6

作者：

Grau, M ^{[1
]}

Lin, C ^{[1
]}

Dier, O ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 25期

关键词：

D O I：

10.1049/el:20031216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsSb/AlGaAsSb type-I lasers with a long emission wavelength are presented. The double quantum well lasers with a highly strained active region operate in continuous-wave mode at room temperature with a wavelength of 2.96 mum. The lasers operate in pulsed mode up to 55degreesC and show an extrapolated threshold current density of 118 A/cm(2) per quantum well.

引用

页码：1816 / 1817

页数：2

共 6 条

[1] 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J].

Garbuzov, DZ ;

Lee, H ;

Khalfin, V ;

Martinelli, R ;

Connolly, JC ;

Belenky, GL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (07) :794-796

[2] Low threshold 2.72 μm GalnAsSb/AlGaAsSb multiple-quantum-well laser [J].

Grau, M ;

Lin, C ;

Amann, MC .

ELECTRONICS LETTERS, 2002, 38 (25) :1678-1679

[3] High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers [J].

Kim, JG ;

Shterengas, L ;

Martinelli, RU ;

Belenky, GL .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1926-1928

[4] Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm [J].

Vicet, A ;

Nicolas, JC ;

Genty, F ;

Rouillard, Y ;

Skouri, EM ;

Baranov, AN ;

Alibert, C .

IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (03) :172-176

[5] A review of recent advances in semiconductor laser based gas monitors [J].

Werle, P .

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1998, 54 (02) :197-236

[6] Application of antimonide lasers for gas sensing in the 3-4-μm range [J].

Werle, P ;

Popov, A .

APPLIED OPTICS, 1999, 38 (09) :1494-1501

← 1 →