Low threshold 2.72 μm GalnAsSb/AlGaAsSb multiple-quantum-well laser

被引：20

作者：

Grau, M ^{[1
]}

Lin, C ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 25期

关键词：

D O I：

10.1049/el:20021126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge waveguide GaInAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 mum, are presented. A threshold current density as low as 356 A/cm(2) has been obtained for devices with 30 mum stripe width and 1.5 mm cavity length in pulse mode at room temperature.

引用

页码：1678 / 1679

页数：2

共 4 条

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