Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes

被引：46

作者：

Mermelstein, C ^{[1
]}

Simanowski, S ^{[1
]}

Mayer, M ^{[1
]}

Kiefer, R ^{[1
]}

Schmitz, J ^{[1
]}

Walther, M ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.1308537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained single- and triple-quantum-well (SQW and TQW), large optical cavity GaInAsSb/AlGaAsSb/GaSb laser diodes emitting at 2.26 mu m are investigated. Internal loss coefficients as low as 5 and 7.7 cm(-1) for the SQW and TQW, respectively, and relatively high internal quantum efficiencies of 65% (SQW) and 69% (TQW) were obtained. Extrapolated threshold current densities for infinite cavity lengths of 55 and 150 A/cm(2) have been deduced for the SQW and TQW, respectively. These values scale very well with the number of QWs and are among the lowest reported for diode lasers in this wavelength range. A differential quantum efficiency as high as 50% and a total power efficiency of 23% were achieved at 280 K. The temperature dependence of the threshold current density revealed a high characteristic temperature of 110 K. Single-ended output powers of 240 mW in continuous-wave mode and exceeding 0.5 W in pulsed operation were obtained for a TQW laser with high-reflection/antireflection coated facets at 280 K, mounted substrate-side down. (C) 2000 American Institute of Physics. [S0003-6951(00)01537-0].

引用

页码：1581 / 1583

页数：3

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