Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling

被引:34
作者
Agyakwa, P. A. [1 ]
Corfield, M. R. [1 ]
Yang, L. [1 ]
Li, J. F. [1 ]
Marques, V. M. F. [2 ]
Johnson, C. M. [1 ]
机构
[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
基金
英国工程与自然科学研究理事会;
关键词
HIGH-TEMPERATURE; GRAIN-GROWTH; RELIABILITY; OPERATION; BEHAVIOR;
D O I
10.1016/j.microrel.2010.08.018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
This paper concerns the reliability of ultrasonically bonded high purity thick aluminium wires at elevated temperature. To date, the evolution of the microstructure of wire bonds during thermomechanical exposure and its influence on reliability have not been fully characterised and understood, particularly as they pertain to thermal cycling regimes which exceed 125 degrees C. Shear testing, indentation hardness and fine-scale microstructural data are reported here which show that the rate of wear-out can be influenced not only by the thermal cycling range (Delta T), but more importantly by the maximum temperature and duration to which bonds are exposed. There is evidence that significant annealing occurs during thermal cycling regimes with high T-max values, which results in the removal of some of the damage accumulated and a reduction in the rate of crack propagation. The rate of bond degradation is also found to be faster for 99.99% (4 N) than 99.999% (5 N) pure Al wires. Analysis of the two wire compositions after thermal cycling suggests that this difference could be attributable to a difference in their creep resistance. In conclusion, our findings suggest that high purity Al wire bonds may be suitable for operation at temperatures which exceed 125 degrees C. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:406 / 415
页数:10
相关论文
共 46 条
[1]
Unusual Observations in the Wear-Out of High-Purity Aluminum Wire Bonds Under Extended Range Passive Thermal Cycling [J].
Agyakwa, Pearl A. ;
Corfield, Martin R. ;
Li, Jian Feng ;
Loh, Wei-Sun ;
Liotti, Enzo ;
Hogg, Simon C. ;
Johnson, C. Mark .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (02) :254-262
[2]
Thermal cycling aging effect on the shear strength, microstructure, intermetallic compounds (IMC) and crack initiation and propagation of reflow soldered Sn-3.8Ag-0.7Cu and wave soldered Sn-3.5Ag ceramic chip components [J].
Andersson, Cristina ;
Tegehall, Per-Erik ;
Anderssn, Dag R. ;
Wetter, Goeran ;
Liu, Johan .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2008, 31 (02) :331-344
[3]
Thermomechanical reliability of low-temperature sintered silver die attached SiC power device assembly [J].
Bai, John Guofeng ;
Lu, Guo-Quan .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (03) :436-441
[4]
High-temperature relaxations [J].
Benoit, W .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2004, 370 (1-2) :12-20
[5]
Exploration of power device reliability using compact device models and fast electrothermal simulation [J].
Bryant, Angus T. ;
Mawby, Philip A. ;
Palmer, Patrick R. ;
Santi, Enrico ;
Hudgins, Jerry L. .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2008, 44 (03) :894-903
[6]
Power Device Stacking using Surface Bump Connections [J].
Castellazzi, A. ;
Mermet-Guyennet, M. .
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :204-+
[7]
Thermomechanical behaviour of environmentally benign Pb-free solders [J].
Chawla, N. .
INTERNATIONAL MATERIALS REVIEWS, 2009, 54 (06) :368-384
[8]
What is indentation hardness? [J].
Cheng, YT ;
Cheng, CM .
SURFACE & COATINGS TECHNOLOGY, 2000, 133 :417-424
[9]
Flow processes at low temperatures in ultrafine-grained aluminum [J].
Chinh, Nguyen Q. ;
Szommer, Peter ;
Csanadi, Tamas ;
Langdon, Terence G. .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2006, 434 (1-2) :326-334
[10]
Lifetime extrapolation for IGBT modules under realistic operation conditions [J].
Ciappa, M ;
Malberti, P ;
Fichtner, W ;
Cova, P ;
Cattani, L ;
Fantini, F .
MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :1131-1136