Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates

被引:6
作者
Nishio, J
Hasegawa, M
Kojima, K
Ohno, T
Ishida, Y
Takahashi, T
Suzuki, T
Tanaka, T
Arai, K
机构
[1] R&D Assoc Future Electron Devices, Adv Power Device Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Ultra Low Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan
[3] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
关键词
doping; chemical vapor deposition processes; hot wall epitaxy; vapor phase epitaxy; semiconducting silicon compounds;
D O I
10.1016/S0022-0248(03)01498-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Uniformity of thickness and carrier concentration of homo-epitaxial films grown on 3-in diameter 4H-SiC substrates using a horizontal hot-wall reactor has been investigated. From the comparison between the experimental results and temperature and gas flow simulation, it is found that the thickness (growth rate) distribution is closely related to the gas velocity distribution, and the carrier concentration distribution has strong correlation with the temperature distribution not on the surface of the susceptor plate but in the gas phase. It is pointed out that the growth rate uniformity of 3-in diameter wafer is degraded by the gas flow disturbance near the susceptor's side walls, and the carrier concentration uniformity is strongly related to the gas phase reaction of nitrogen containing species, such as N-2 and/or others. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:113 / 122
页数:10
相关论文
共 14 条
[1]   Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor [J].
Danielsson, Ö ;
Forsberg, U ;
Henry, A ;
Janzén, E .
JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) :352-364
[2]  
FORSBERG U, 2002, EUR C SIL CARB REL M
[3]   Growth and characterisation of SiC power device material [J].
Kordina, O ;
Henry, A ;
Janzen, E ;
Carter, CH .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :97-102
[4]  
KUSHIBE M, 1999, UNPUB
[5]   Thickness determination of low doped SiC epi-films on highly doped SiC substrates [J].
MacMillan, MF ;
Henry, A ;
Janzen, E .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :300-303
[6]   Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition [J].
Nishio, J ;
Kushibe, M ;
Masahara, K ;
Kojima, K ;
Ohno, T ;
Ishida, Y ;
Takahashi, T ;
Suzuki, T ;
Tanaka, T ;
Yoshida, S ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :215-218
[7]  
Nordby HD, 2000, MATER SCI FORUM, V338-3, P173, DOI 10.4028/www.scientific.net/MSF.338-342.173
[8]   Characterization of thick 4H-SiC hot-wall CVD layers [J].
Paisley, MJ ;
Irvine, KG ;
Kordina, O ;
Singh, R ;
Palmour, JW ;
Carter, CH .
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 :167-172
[9]   Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition [J].
Pons, M ;
Mezière, J ;
Kuan, SWT ;
Blanquet, E ;
Ferret, P ;
Di Cioccio, L ;
Billon, T ;
Madar, R .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :223-226
[10]   Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison. [J].
Rupp, R ;
Wiedenhofer, A ;
Stephani, D .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :125-129