An analytical model of strain isolation for stretchable and flexible electronics

被引：53

作者：

Cheng, H. ^{[1
,2
]}

Wu, J. ^{[1
,2
]}

Li, M. ^{[1
,2
,3
]}

Kim, D. -H. ^{[4
,5
]}

Kim, Y. -S. ^{[4
,5
]}

Huang, Y. ^{[1
,2
]}

Kang, Z. ^{[3
]}

Hwang, K. C. ^{[6
]}

Rogers, J. A. ^{[4
,5
]}

机构：

[1] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

[3] Dalian Univ Technol, State Key Lab Struct Anal Ind Equipment, Dalian 116024, Peoples R China

[4] Univ Illinois, Dept Mat Sci & Engn, Mat Res Lab, Urbana, IL 61801 USA

[5] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

[6] Tsinghua Univ, Dept Engn Mech, AML, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 06期

基金：

美国国家科学基金会;

关键词：

HIGH-PERFORMANCE ELECTRONICS; COMPLIANT SUBSTRATE; SPHERICAL DOMES; FILM; CIRCUITS; SILICON; TFTS;

D O I：

10.1063/1.3553020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One important aspect of stretchable electronics design is to shield the active devices from strains through insertion of a soft layer between devices and substrate. An analytical model is established, which gives linear dependence of strain isolation on the reciprocal of strain-isolation layer thickness, and the reciprocal of device and substrate stiffness. Strain isolation is also linearly proportional to the shear modulus of strain-isolation layer and square of device length. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553020]

引用

页数：3

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