Preparation of B4C thin film by intense pulsed ion-beam evaporation

被引：23

作者：

Kitajima, K ^{[1
]}

Suzuki, T ^{[1
]}

Jiang, WH ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 2B期

关键词：

boron carbide; ion-beam evaporation; thin film; crystallization; high hardness;

D O I：

10.1143/JJAP.40.1030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron carbide (B4C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B4C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B4C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B4C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B-C combination and the vibration of B-12-B-12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be KV similar to 2300.

引用

页码：1030 / 1034

页数：5

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