Bias enhanced nucleation of diamond on Si(100) in a vertical straight hot filament CVD

被引：16

作者：

Makris, TD ^{[1
]}

Giorgi, R ^{[1
]}

Lisi, N ^{[1
]}

Pilloni, L ^{[1
]}

Salemitano, E ^{[1
]}

机构：

[1] ENEA Casaccia Res Ctr, Rome, Italy

来源：

关键词：

diamond film; nucleation; bias growth; hot filament CVD;

D O I：

10.1016/j.diamond.2005.01.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of the Bias Enhanced Nucleation (BEN) step is to increase the nucleation density during the CVD diamond growth process with respect to more traditional methods like scratching. Diamond seeds were grown in a HFCVD reactor with several vertical straight filaments and a double bias geometry allowing BEN over large area silicon substrates. The effect of the substrate temperature and the gas composition was studied. Spectroscopic and morphological characterisation has been performed on the substrates, both after the BEN and the subsequent growth process. The substrate temperature was found to be an important parameter controlling the nucleation. When the substrate temperature is above 1100 degrees C, both the nucleation and the growth resulted in nanocrystalline SiC while at lower temperature optimal diamond nucleation and growth were found. Simultaneously, intermediate phases between elemental and non-stoichiometric SiC were observed by XPS. Nucleation densities of 10(11) cm(-2) and higher were obtained over a surface of several squared centimeters. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：318 / 322

页数：5

共 19 条

[1] Comparison of classical and BEN nucleation studied on thinned Si(111) samples: a HRTEM study [J].