Monte Carlo simulation of Schottky contact with direct tunnelling model

被引：44

作者：

Sun, L ^{[1
]}

Liu, XY ^{[1
]}

Liu, M ^{[1
]}

Du, G ^{[1
]}

Han, RQ ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 06期

关键词：

D O I：

10.1088/0268-1242/18/6/331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have presented a practical direct tunnelling model, which can be applied in the Monte Carlo simulation of the Schottky contact. In this model, the thermionic emission and the tunnelling effect of the Schottky barrier are included. In order to verify the validity of this model, we have implemented it in the Monte Carlo simulator to simulate the characteristics of the Schottky barrier diode. An agreement has been obtained between the simulation results and the measurements. Besides, we apply this model to study the performance of the n-channel Schottky barrier MOSFET (SB-MOSFET), in which the doped source/drain of the conventional MOSFET is replaced by metal silicide. We find that the low barrier at the source will induce high drive current in the on state, and at the same time reduce the on/off ratio. In addition, decreasing the metal silicide source/drain contact areas will improve the performance of the SB-MOSFET. By using this model, the simulation of the n-channel SB-MOSFET will be helpful in designing the parameters of these kinds of devices.

引用

页码：576 / 581

页数：6

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