A unified simulation of Schottky and ohmic contacts

被引：120

作者：

Matsuzawa, K ^{[1
]}

Uchida, K ^{[1
]}

Nishiyama, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 01期

关键词：

device simulation; ohmic; salicide; Schottky;

D O I：

10.1109/16.817574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each grid of semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and contact resistances under high impurity concentration conditions are reasonable, compared with measurements. As examples of application to actual devices, the influence of the contact resistance on salicided MOSFET's with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTT's) from the short-channel effect (SCE) are demonstrated.

引用

页码：103 / 108

页数：6

共 17 条

[1] A REVISED BOUNDARY-CONDITION FOR THE NUMERICAL-ANALYSIS OF SCHOTTKY-BARRIER DIODES [J].

ADAMS, J ;

TANG, TW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :525-527

[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[4] NUMERICAL-SIMULATION OF TUNNEL EFFECT TRANSISTORS EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION [J].

HATTORI, R ;

SHIRAFUJI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :612-618

[5] NUMERICAL MODELING OF HOT-ELECTRONS IN N-GAAS SCHOTTKY-BARRIER DIODES [J].

HJELMGREN, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) :1228-1234

[6] Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm [J].

Huang, CK ;

Zhang, WE ;

Yang, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :842-848

[7]

*INSPEC, 1988, SER EMIS DAT SER

[8]

LOU YS, 1970, SOLID STATE ELECT, V38, P163

[9]

MATSUZAWA K, 1998, IWCE, P163

[10] ON THE CALCULATION OF SPECIFIC CONTACT RESISTIVITY ON (100) SI [J].

NG, KK ;

LIU, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) :1535-1537

← 1 2 →