Solvent-free solution processed passivation layer for improved long-term stability of organic field-effect transistors

被引：25

作者：

Nam, Sooji ^{[1
]}

Jang, Jaeyoung ^{[1
]}

Kim, Kihyun ^{[2
]}

Yun, Won Min ^{[1
]}

Chung, Dae Sung ^{[1
]}

Hwang, Jihun ^{[1
]}

Kwon, Oh Kwan ^{[1
]}

Chang, Taihyun ^{[2
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Chem, Polymer Phys Chem Lab, Pohang 790784, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 03期

关键词：

SOL-GEL PROCESS; HYBRID MATERIALS; THIN-FILMS; CONDENSATION; POLYMERS; DEVICES; WATER; AIR;

D O I：

10.1039/c0jm00898b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In an effort to realize organic field-effect transistors (OFETs) that are stable over long periods of time, we have designed an organic-inorganic hybrid passivation material (TGD622t) prepared via a nonhydrolytic sol-gel process that does not require the use of solvents. Fourier-transform infrared spectroscopy, atomic force microscopy, and UV-visible spectroscopy demonstrated the high density and low porosity of the organic-inorganic hybrid transparent TGD622t film after low-temperature curing (below 100 degrees C). The dense TGD622t passivation layer, which exhibited a water vapor transmission rate (WVTR) of 0.434 g m(-2) per day, effectively protected the poly[9,9-dioctylfluorenyl-2,7- diyl]-co-(bithiophene)]-based OFETs from humidity and oxygen in ambient air, resulting in a much more robust OFET performance with long-term stability relative to the operation of unpassivated devices.

引用

页码：775 / 780

页数：6

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