Lateral short range ordering of step bunches in InGaAs/GaAs superlattices

被引：3

作者：

Hanke, M

Schmidbauer, M

Köhler, R

Kirmse, H

Pristovsek, M

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10632 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 04期

关键词：

D O I：

10.1063/1.1640786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present paper we report on structural investigations of fivefold In0.2Ga0.8As/GaAs superlattices which have been grown by means of metal organic chemical vapor deposition on vicinal GaAs(001) substrates. Cross-sectional transmission electron micrographs exhibit an initially flat and nonfaceted grooved surface, while step bunching occurs during subsequent growth stages with an inclined vertical inheritance approximately 45degrees off the (001) direction. A reconstructed sample cross section on the base of high resolution x-ray diffraction data qualitatively confirms the local morphology proved by transmission electron microscopy. Moreover, a line shape analysis of diffusely scattered intensity using Gauss profiles indicates a lateral short range ordering of step bunches. (C) 2004 American Institute of Physics.

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页码：1736 / 1739

页数：4

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