A new preparation method for sputtered MoO3 multilayers for the application in gas sensors

被引:79
作者
Imawan, C [1 ]
Steffes, H [1 ]
Solzbacher, F [1 ]
Obermeier, E [1 ]
机构
[1] Tech Univ Berlin, MAT, Sekr TIB 3 1, D-13355 Berlin, Germany
关键词
sputtering; MoO3; multilayer; H-2 gas sensors;
D O I
10.1016/S0925-4005(01)00801-2
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A new method for the preparation of sputtered MoO3 multilayer thin films for the application in gas sensors has been developed. A remarkable change of the crystallinity and the microstructure compared to the whisker-like structure of conventionally sputtered MoO3 single-layer films is found. The multilayer films have a dense and a smooth structure with a small crystallite size. This preparation method evidences that the H-2 sensing properties, such as sensitivity, selectivity, response time and long-term stability of the sensors can be improved. The cross-sensitivity towards NO2, NH3, CO, CH4, and SO2 is low. The response time (tau (50)) to H-2 can be drastically reduced from 40 s for the single-layer film to 10 s. The sensor exposes a very high response to H2 with a good signal linearity for high concentrations ranging from 2000 to 9000 ppm. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:119 / 125
页数:7
相关论文
共 14 条
[11]   HALL MEASUREMENT STUDIES AND AN ELECTRICAL-CONDUCTION MODEL OF TIN OXIDE ULTRAFINE PARTICLE FILMS [J].
OGAWA, H ;
NISHIKAWA, M ;
ABE, A .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4448-4455
[12]   PREPARATION PHYSICAL STRUCTURE RELATIONS IN SIC SPUTTERED FILMS [J].
ROY, RA ;
MESSIER, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :312-315
[13]  
SUZUKI K, 1995, SENSOR ACTUAT B-CHEM, V24, P773
[14]  
Verroni M., 1997, THIN SOLID FILMS, V307, P148