Carrier recombination activities and structural properties of small-angle boundaries in multicrystalline silicon

被引：6

作者：

Chen, J. ^{[1
]}

Sekiguchi, T. ^{[1
]}

Ito, S. ^{[2
]}

Yang, D. ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai 9808577, Japan

[3] Zhenjiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

small-angle grain boundaries; mc-Si; EBIC;

D O I：

10.4028/www.scientific.net/SSP.131-133.9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0 degrees to 10 degrees showed weak EBIC contrast (0-10%) with the maximum appeared at 2 degrees. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

引用

页码：9 / +

页数：2

共 15 条

[1] ELECTRICAL-ACTIVITY OF THE 1ST-ORDER AND 2ND-ORDER TWINS AND GRAIN-BOUNDARIES IN SILICON [J].