Room-temperature operation of InAs quantum-dash lasers on InP (001)

被引：195

作者：

Wang, RH ^{[1
]}

Stintz, A ^{[1
]}

Varangis, PM ^{[1
]}

Newell, TC ^{[1
]}

Li, H ^{[1
]}

Malloy, KJ ^{[1
]}

Lester, LF ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 08期

关键词：

InAs; InP; quantum dash; quantum dot; self-assembled; semiconductor laser;

D O I：

10.1109/68.935797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 mum for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm(2) for single-stack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current an the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 em(-1) for single-stack and 22 cm(-1) for five-stack lasers.

引用

页码：767 / 769

页数：3

共 19 条

[1]

Bimberg D., 1999, QUANTUM DOT HETEROST

[2] Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Desieres, Y ;

Benyattou, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934

[3] INITIAL-STAGES OF INAS EPITAXY ON VICINAL GAAS(001)-(2X4) [J].

BRESSLERHILL, V ;

LORKE, A ;

VARMA, S ;

PETROFF, PM ;

POND, K ;

WEINBERG, WH .

PHYSICAL REVIEW B, 1994, 50 (12) :8479-8487

[4]

Coldren L. A., 2012, DIODE LASERS PHOTONI, V218

[5] Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers [J].

Huang, XD ;

Stintz, A ;

Hains, CP ;

Liu, GT ;

Cheng, J ;

Malloy, KJ .

ELECTRONICS LETTERS, 2000, 36 (01) :41-42

[6] Optical characteristics of 1.24-μm InAs quantum-dot laser diodes [J].

Lester, LF ;

Stintz, A ;

Li, H ;

Newell, TC ;

Pease, EA ;

Fuchs, BA ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :931-933

[7] The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures [J].

Liu, GT ;

Stintz, A ;

Li, H ;

Newell, TC ;

Gray, AL ;

Varangis, PM ;

Malloy, KJ ;

Lester, LF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (11) :1272-1279

[8] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].

Newell, TC ;

Bossert, DJ ;

Stintz, A ;

Fuchs, B ;

Malloy, KJ ;

Lester, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529

[9] High-power AlGaInAs strained multiquantum well lasers operating at 1.52μm [J].

Newell, TC ;

Varangis, PM ;

Pease, E ;

Stintz, A ;

Liu, GT ;

Malloy, KJ ;

Lester, LF .

ELECTRONICS LETTERS, 2000, 36 (11) :955-956

[10] Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP [J].

Nishi, K ;

Yamada, M ;

Anan, T ;

Gomyo, A ;

Sugou, S .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :526-528

← 1 2 →