High-power AlGaInAs strained multiquantum well lasers operating at 1.52μm

被引：10

作者：

Newell, TC ^{[1
]}

Varangis, PM ^{[1
]}

Pease, E ^{[1
]}

Stintz, A ^{[1
]}

Liu, GT ^{[1
]}

Malloy, KJ ^{[1
]}

Lester, LF ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 11期

关键词：

D O I：

10.1049/el:20000731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.75W CW power in AlGaZnAs/InP strained QW lasers is demonstrated. Room temperature threshold current densities are 410A/cm(2), and the characteristic temperature is 69K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how nonradiative recombination mechanisms limit the performance.

引用

页码：955 / 956

页数：2

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