LOW THRESHOLD CURRENT-DENSITY 1-BULLET-5-MU-M (IN, GA, AL)AS QUANTUM-WELL LASERS GROWN BY MBE

被引：12

作者：

MONDRY, MJ

CHUANG, ZM

PETERS, MG

COLDREN, LA

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 15期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of strained ternary and quaternary (In, Ga, Al) quantum wells for the active regions in MBE grown 1.5-mu-m lasers has been compared. Threshold current densities as low as 530 A/cm2 were obtained using compressively strained (In, Ga, Al)As quaternary quantum wells with waveguide losses of 9.4 cm-1 and a current injection efficiency of 83%. These results represent the best (Al, Ga, In)As/InP quantum well lasers grown by MBE.

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收藏

页码：1471 / 1472

页数：2

相关论文

共 11 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] MBE GROWTH OF GRADED INDEX ALGAINAS MQW LASERS ON INP [J].

ALLOVON, M ;

QUILLEC, M ;

BLEZ, M ;

KAZMIERSKI, C .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :484-488

[3] THEORETICAL GAIN IN COMPRESSIVE AND TENSILE STRAINED INGAAS/INGAASP QUANTUM-WELLS [J].

CORZINE, SW ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1991, 59 (05) :588-590

[4] LOW NONLINEAR GAIN IN INGAAS/INGAALAS SEPARATE CONFINEMENT MULTIQUANTUM WELL LASERS [J].

GRABMAIER, A ;

HANGLEITER, A ;

FUCHS, G ;

WHITEAWAY, JEA ;

GLEW, RW .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :3024-3026

[5] VERY LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

KASUKAWA, A ;

BHAT, R ;

ZAH, CE ;

KOZA, MA ;

LEE, TP .

APPLIED PHYSICS LETTERS, 1991, 59 (20) :2486-2488

[6] LASER PROPERTIES AND CARRIER COLLECTION IN ULTRATHIN QUANTUM-WELL HETEROSTRUCTURES [J].

KOLBAS, RM ;

LO, YC ;

LEE, JH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :25-31

[7] LOW-THRESHOLD-CURRENT-DENSITY 1.5-MU-M LASERS USING COMPRESSIVELY STRAINED INGAASP QUANTUM-WELLS [J].

OSINSKI, JS ;

ZOU, Y ;

GRODZINSKI, P ;

MATHUR, A ;

DAPKUS, PD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :10-13

[8]

SUEMUNE I, 1988, 20TH C SOL STAT DEV, P339

[9] HIGH-PERFORMANCE 1.5 MICRO-M WAVELENGTH INGAAS-INGAASP STRAINED QUANTUM-WELL LASERS AND AMPLIFIERS [J].

THIJS, PJA ;

TIEMEIJER, LF ;

KUINDERSMA, PI ;

BINSMA, JJM ;

VANDONGEN, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1426-1439

[10] VERY LOW THRESHOLD SINGLE QUANTUM-WELL GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS/INGAASP LASERS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

CHOA, FS ;

WU, MC ;

CHEN, YK ;

SERGENT, AM ;

SCIORTINO, PF .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2610-2612