1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

被引：44

作者：

Liu, GT ^{[1
]}

Stintz, A ^{[1
]}

Pease, EA ^{[1
]}

Newell, TC ^{[1
]}

Malloy, KJ ^{[1
]}

Lester, LF ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 01期

关键词：

AlGaInAs lasers; digital alloys; semiconductor quantum wells;

D O I：

10.1109/68.817428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AIGaInAs multiple-quantum well (MQW) 1.58-mu m laser diodes on InP. A threshold current density as low as 510 A/cm(2) has been demonstrated for broad area lasers with 1% strained AIGaInAs MQW's, which is the best MBE result in this material system. A single facet pulsed power as high as 0.56 W is obtained. It is also found that the efficiency and internal loss of digital alloy AIGaInAs QW devices are comparable to lasers grown by conventional MBE.

引用

页码：4 / 6

页数：3

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